IPB60R330P6ATMA1

IPB60R330P6ATMA1概述

N-CH 600V 12A

Summary of Features:

.
Reduced gate charge Q g
.
Higher V th
.
Good body diode ruggedness
.
Optimized integrated R g
.
Improved dv/dt from 50V/ns
.
CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits:

.
Improved effciency especially in light load condition
.
Better efficiency in soft switching applications due to earlier turn-off
.
Suitable for hard- & soft-switching topologies
.
Optimized balance of efficiency and ease of use and good controllability of switching behavior
.
High robustness and better efficiency
.
Outstanding quality & reliability
IPB60R330P6ATMA1数据文档
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