VISHAY SIS412DN-T1-GE3 晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V
The is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
型号 | 品牌 | 下载 |
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SIS412DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS413DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS427EDN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS406DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS407ADN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS410DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS436DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS456DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS434DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS454DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS468DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |