IXGT30N60B2

IXGT30N60B2概述

Trans IGBT Chip N-CH 600V 70A 3Pin2+Tab TO-268

Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching

Features

Medium frequency IGBT

Square RBSOA

High current handling capability

MOS Gate turn-on

\- drive simplicity


得捷:
IGBT 600V 70A 190W TO268


艾睿:
Trans IGBT Chip N-CH 600V 70A 3-Pin2+Tab TO-268


IXGT30N60B2数据文档
型号 品牌 下载
IXGT30N60B2

IXYS Semiconductor

下载
IXGT60N60

IXYS Semiconductor

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IXGT60N60B2

IXYS Semiconductor

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IXGT60N60C2

IXYS Semiconductor

下载
IXGT30N60B2D1

IXYS Semiconductor

下载
IXGT30N60C2

IXYS Semiconductor

下载
IXGT30N60C2D1

IXYS Semiconductor

下载
IXGT40N60B2

IXYS Semiconductor

下载
IXGT40N60B2D1

IXYS Semiconductor

下载
IXGT40N60C2

IXYS Semiconductor

下载
IXGT40N60C2D1

IXYS Semiconductor

下载

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