VN2110K1-G

VN2110K1-G 编带

N-Channel 100V 200mA Tj 360mW Tc Surface Mount SOT-23-3

得捷:
MOSFET N-CH 100V 200MA SOT23-3

欧时:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V

立创商城:
N沟道 100V 200mA

贸泽:
MOSFET 100V 4Ohm

e络盟:
晶体管, MOSFET, N沟道, 200 mA, 100 V, 3 ohm, 10 V, 2.4 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the VN2110K1-G power MOSFET, developed by Microchip Technology. Its maximum power dissipation is 360 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 4.0 Ohm3 SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 0.6A; 360mW; SOT23-3

Verical:
Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R

Win Source:
MOSFET N-CH 100V 0.2A SOT23-3