STGB35N35LZT4

STGB35N35LZT4概述

Trans IGBT Chip N-CH 380V 40A 176000mW Automotive 3Pin2+Tab D2PAK T/R

Don"t be afraid to step up the amps in your device when using this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 176000 mW. It has a maximum collector emitter voltage of 380 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

STGB35N35LZT4数据文档
型号 品牌 下载
STGB35N35LZT4

ST Microelectronics 意法半导体

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STGB10NB40LZT4

ST Microelectronics 意法半导体

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STGB10NC60KT4

ST Microelectronics 意法半导体

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STGB19NC60KT4

ST Microelectronics 意法半导体

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STGB30NC60WT4

ST Microelectronics 意法半导体

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STGB30NC60KT4

ST Microelectronics 意法半导体

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STGB20NB41LZT4

ST Microelectronics 意法半导体

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STGB40V60F

ST Microelectronics 意法半导体

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STGB19NC60WT4

ST Microelectronics 意法半导体

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STGB20V60DF

ST Microelectronics 意法半导体

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STGB20NB37LZT4

ST Microelectronics 意法半导体

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