RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 19500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD55008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55035-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003TR-E | ST Microelectronics 意法半导体 | 下载 |