BFR740L3RHE6327XTSA1

INFINEON  BFR740L3RHE6327XTSA1  晶体管 双极-射频, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160 hFE

RF NPN 4.7V 30mA 42GHz 160mW 表面贴装型 PG-TSLP-3

欧时:
Infineon BFR740L3RHE6327XTSA1

得捷:
RF TRANS NPN 4.7V 42GHZ TSLP-3

贸泽:
RF Bipolar Transistors NPN Silicn Germanium RF Transistor

e络盟:
晶体管 双极-射频, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160 hFE

艾睿:
Look no further than the BFR740L3RHE6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 4V 0.03A 3-Pin TSLP T/R

Chip1Stop:
Trans GP BJT NPN 4V 0.03A 3-Pin TSLP T/R

TME:
Transistor: NPN; bipolar; RF; 4V; 40mA; 160mW; TSLP-3-9

Verical:
Trans RF BJT NPN 4V 0.03A 160mW Automotive 3-Pin TSLP T/R

Newark:
# INFINEON  BFR740L3RHE6327XTSA1  Bipolar - RF Transistor, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160