Trans Digital BJT PNP 50V 800mA 200mW 3Pin S-Mini T/R
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP digital transistor from is for you. This product"s maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
型号 | 品牌 | 下载 |
---|---|---|
RN2427TE85LF | Toshiba 东芝 | 下载 |
RN24S-I/RM | Microchip 微芯 | 下载 |
RN2483-I/RM095 | Microchip 微芯 | 下载 |
RN242CST2RA | ROHM Semiconductor 罗姆半导体 | 下载 |
RN242CST2R | ROHM Semiconductor 罗姆半导体 | 下载 |
RN2413TE85LF | Toshiba 东芝 | 下载 |
RN2412TE85LF | Toshiba 东芝 | 下载 |
RN2422TE85LF | Toshiba 东芝 | 下载 |
RN242-1-02 | Schaffner | 下载 |
RN242-1.4-02 | Schaffner | 下载 |
RN242-6/02 | Schaffner | 下载 |