SRAM Chip Async Single 3.3V 4M-bit 256K x 16 55ns 44Pin TSOP-II
DESCRIPTION
TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
36 mW typical operating
9 µW typical CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V VDD IS62WV25616ALL
2.5V--3.6V VDD IS62WV25616BLL
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
型号 | 品牌 | 下载 |
---|---|---|
IS62WV25616BLL-55TI | Integrated Silicon SolutionISSI | 下载 |
IS62WV1288BLL-55HL | Integrated Silicon SolutionISSI | 下载 |
IS62LV12816LL-70TI | ICSI 矽成 | 下载 |
IS62C1024AL-35TI | Integrated Silicon SolutionISSI | 下载 |
IS62WV6416ALL-55BI | Integrated Silicon SolutionISSI | 下载 |
IS62WV1288BLL-55HI-TR | Integrated Silicon SolutionISSI | 下载 |
IS62WV12816BLL-55T-TR | Integrated Silicon SolutionISSI | 下载 |
IS62WV2568BLL-70BI | Integrated Silicon SolutionISSI | 下载 |
IS62WV1288BLL-55TI-TR | Integrated Silicon SolutionISSI | 下载 |
IS62WV2568BLL-70HI | Integrated Silicon SolutionISSI | 下载 |
IS62WV1288BLL-55HI | Integrated Silicon SolutionISSI | 下载 |