SI3460BDV-T1-E3

VISHAY  SI3460BDV-T1-E3  场效应管, MOSFET, N沟道, 20V, 8A, TSOP, 整卷

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

e络盟:
VISHAY  SI3460BDV-T1-E3  场效应管, MOSFET, N沟道, 20V, 8A, TSOP, 整卷

艾睿:
Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R

富昌:
单 N沟道 20 V 0.027 Ohms 表面贴装 功率Mosfet - TSOP-6

Verical:
Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R

Newark:
# VISHAY  SI3460BDV-T1-E3  MOSFET Transistor, N Channel, 8 A, 20 V, 0.023 ohm, 8 V, 1 V