K6T1008C2E-GF70

K6T1008C2E-GF70概述

IC Memory K6T1008/SO/K6T1008C2E/GF70 SAMSUNG Static RAM memory prog. volatille KX8=128 SO32

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 128Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

·Three state output and TTL Compatible

·Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R

K6T1008C2E-GF70数据文档
型号 品牌 下载
K6T1008C2E-GF70

Samsung 三星

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K6T1008C2E-GL70

Samsung 三星

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K6T1008C2E-TB55

Samsung 三星

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K6T1008C2E-GF55

Samsung 三星

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K6T1008C2E-DL70

Samsung 三星

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K6T1008C2C-GB55

Samsung 三星

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K6T1008C2C-DB70

Samsung 三星

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K6T1008C2E-GB70

Samsung 三星

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K6T1008C2C-DL70

Samsung 三星

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K6T1008C2C-DB55

Samsung 三星

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K6T1008C2C-GP70

Samsung 三星

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