Trans MOSFET N-CH 30V 4.9A 8Pin SOIC
Description
These HEXFET® Power MOSFET"s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dual N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
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