BUL138

BUL138概述

STMICROELECTRONICS  BUL138  单晶体管 双极, NPN, 400 V, 80 W, 5 A, 10 hFE

高电压,STMicroelectronics


得捷:
TRANS NPN 400V 5A TO220


欧时:
STMicroelectronics BUL138 , NPN 晶体管, 5 A, Vce=400 V, HFE:8, 3引脚 TO-220封装


贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Hi-Volt Fast Sw


艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN BUL138 GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.


安富利:
Trans GP BJT NPN 400V 5A 3-Pin3+Tab TO-220 Tube


富昌:
NPN 80 W 400 V 5 A Flange Mount Fast-Switching Power Transistor - TO-220-3


Chip1Stop:
Trans GP BJT NPN 400V 5A 3-Pin3+Tab TO-220 Tube


Verical:
Trans GP BJT NPN 400V 5A 80000mW 3-Pin3+Tab TO-220AB Tube


Newark:
# STMICROELECTRONICS  BUL138  Bipolar BJT Single Transistor, NPN, 400 V, 80 W, 5 A, 10 hFE


Win Source:
TRANS NPN 400V 5A TO-220


BUL138数据文档
型号 品牌 下载
BUL138

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BUL128D-B

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BUL128

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BUL1403ED

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BUL146G

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BUL146FG

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BUL128-K

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BUL146F

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BUL147

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BUL128D

ST Microelectronics 意法半导体

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BUL128DB

ST Microelectronics 意法半导体

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