DE275-201N25A

IXYS RF  DE275-201N25A  晶体管, 射频FET, 200 V, 25 A, 590 W, 100 MHz, DE-275

The is a N-channel RF Power MOSFET optimized for RF and high speed switching at frequencies to 100MHz. The device offers isolated substrate, high isolation voltage >2500V, excellent thermal transfer and increased temperature and power cycling capability.

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Easy to mount

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No insulators needed

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High power density

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Low gate charge and capacitances

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Easier to drive

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Faster switching

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Low RDS ON

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Very low insertion inductance <2nH

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High dV/dt

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Nanosecond switching