2N5179 Series NPN 12V 50mA 300mW Through Hole RF Transistor - TO-72
This RF amplifier from is designed to operate at higher RF frequencies. This product"s minimum DC current gain is 25@3mA@1 V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N5179 | Central Semiconductor | 下载 |
| 2N5191G | ON Semiconductor 安森美 | 下载 |
| 2N5192G | ON Semiconductor 安森美 | 下载 |
| 2N5195G | ON Semiconductor 安森美 | 下载 |
| 2N5115 | Microsemi 美高森美 | 下载 |
| 2N5115UB | Microsemi 美高森美 | 下载 |
| 2N5116 | Microsemi 美高森美 | 下载 |
| 2N5114 | Microsemi 美高森美 | 下载 |
| 2N5114UB | Microsemi 美高森美 | 下载 |
| 2N5114-E3 | Vishay Semiconductor 威世 | 下载 |
| 2N5116-E3 | Vishay Semiconductor 威世 | 下载 |