IPD90N04S304ATMA1

Infineon OptiMOS T 系列 Si N沟道 MOSFET IPD90N04S304ATMA1, 90 A, Vds=40 V, 3引脚 DPAK TO-252封装

OptiMOS™T 功率 MOSFET

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色产品（符合 RoHS 标准）

得捷:
MOSFET N-CH 40V 90A TO252-3

立创商城:
N沟道 40V 90A

欧时:
Infineon OptiMOS T 系列 Si N沟道 MOSFET IPD90N04S304ATMA1, 90 A, Vds=40 V, 3引脚 DPAK TO-252封装

艾睿:
This IPD90N04S304ATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 40V 90A 3-Pin2+Tab TO-252

Chip1Stop:
Trans MOSFET N-CH 40V 90A Automotive 3-Pin2+Tab TO-252 T/R

TME:
Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W

Verical:
Trans MOSFET N-CH 40V 90A Automotive 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 40V 90A TO252-3