MULTICOMP BC108 单晶体管 双极, 通用, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 110 hFE
The from are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
-
.
-
Collector emitter voltage Vce of 25V
-
.
-
Continuous collector current Ic of 200mA
-
.
-
Power dissipation of 600mW
-
.
-
Operating junction temperature range from -65°C to 200°C
-
.
-
Collector emitter saturation voltage of 600mV at Ic=100mA
-
.
-
DC current gain of 40 at Ic=10µA