BGA 416 E6327

BGA 416 E6327概述

INFINEON  BGA 416 E6327  芯片, 射频放大器, 14DB, 3GHZ, 5V, SOT-143-4

The is a monolithic silicon RF Cascade Amplifier with high reverse isolation and SIEGET®-25 technology. A bias network is integrated for simplified biasing. The low noise amplifier is as flexible as a discrete transistor and offers numerous integrated features for smaller and thinner mobile device designs. The device perfectly fits to the embedded FM radio active antennas in cellular phones mobile FM radio.

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GMA = 23dB at 900MHz
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Ultra high reverse isolation, 60dB at 900MHz
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Low noise figure, F50R = 1.2dB at 900MHz
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On chip bias circuitry, 5.5mA bias current at VCC = 3V
BGA 416 E6327数据文档
型号 品牌 下载
BGA 416 E6327

Infineon 英飞凌

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BGA 614 H6327

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BGA 758L7 E6327

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BGA 825L6S E6327

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BGA 428 H6327

Infineon 英飞凌

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BGA 428 E6327

Infineon 英飞凌

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BGA 712L16 E6327

Infineon 英飞凌

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BGA 748L16 E6327

Infineon 英飞凌

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BGA 736L16 E6327

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BGA 734L16 E6327

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BGA 749N16 E6327

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