RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 79000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD85025STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035-E | ST Microelectronics 意法半导体 | 下载 |
| PD85004 | ST Microelectronics 意法半导体 | 下载 |
| PD85006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD85006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025-E | ST Microelectronics 意法半导体 | 下载 |