BCX5610TA

双极晶体管 - 双极结型晶体管BJT Pwr Mid Perf Transistor SOT89 T&R; 1K

- 双极 BJT - 单 NPN 80 V 1 A 150MHz 1 W 表面贴装型 SOT-89-3

得捷:
TRANS NPN 80V 1A SOT89-3

立创商城:
NPN 80V 1A

贸泽:
双极晶体管 - 双极结型晶体管BJT Pwr Mid Perf Transistor SOT89 T&R; 1K

艾睿:
Use this versatile NPN BCX5610TA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
Trans GP BJT NPN 80V 1A 3+Tab SOT89

TME:
Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89

DeviceMart:
TRANS NPN 80V 1A 1W SOT89

Win Source:
TRANS NPN 80V 1A SOT89