VISHAY SI3590DV-T1-GE3 双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
The is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDSon for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SI3590DV-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SI3500-A-GMR | Silicon Labs 芯科 | 下载 |
| SI3500-A-GM | Silicon Labs 芯科 | 下载 |
| SI3585CDV-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SI3552DV-T1-E3 | Vishay Semiconductor 威世 | 下载 |
| SI3552DV-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SI3590DV-T1-E3 | Vishay Semiconductor 威世 | 下载 |
| SI3586DV-T1-E3 | Vishay Semiconductor 威世 | 下载 |
| SI3585DV-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SI3588DV-T1-E3 | Vishay Siliconix | 下载 |
| SI3586DV-T1-GE3 | Vishay Siliconix | 下载 |