BLF10M6200U数据手册PDF_BLF10M6200U中文资料-锐单商城

BLF10M6200U概述

RF Power Transistor, 700 - 1000MHz, 200W, 20dB, 28V, LDMOS, SOT502A

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. ### Features and benefits

.: Easy power control * Integrated ESD protection * Excellent ruggedness * High efficiency * Excellent thermal stability * Designed for broadband operation 700 MHz to 1000 MHz * Internally matched for ease of use * Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances RoHS

艾睿:
Trans RF MOSFET N-CH 65V 3-Pin SOT-502A Blister

RfMW:
RF Power Transistor, 700 - 1000 MHz, 200 W, 20 dB, 28 V, LDMOS, SOT502A

BLF10M6200U数据文档