IPD60R750E6ATMA1

晶体管, MOSFET, N沟道, 5.7 A, 600 V, 0.68 ohm, 10 V, 3 V

IPD60R750E6, SP001117728

得捷:
IPD60R750 - 600V COOLMOS N-CHANN

立创商城:
N沟道 600V 5.7A

贸泽:
MOSFET N-Ch 650V 5.7A DPAK-2

e络盟:
晶体管, MOSFET, N沟道, 5.7 A, 600 V, 0.68 ohm, 10 V, 3 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPD60R750E6ATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 48000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 5.7A 3-Pin TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 3.6A; 48W; PG-TO252-3

Verical:
Trans MOSFET N-CH 600V 5.7A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 600V 5.7A TO252