AFT26HW050GSR3数据手册PDF_AFT26HW050GSR3中文资料-锐单商城

AFT26HW050GSR3概述

RF Power Transistor,2496 to 2690MHz, 42W, Typ Gain in dB is 14.2 @ 2690MHz, 28V, LDMOS, SOT1809

RF Mosfet LDMOS（双） 28 V 100 mA 2.69GHz 14.2dB 9W NI-780GS-4L4L

得捷:
FET RF 2CH 65V 2.69GHZ NI780-4

艾睿:
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R

安富利:
Trans MOSFET N-CH 65V 8-Pin NI-780S T/R

Verical:
Trans RF MOSFET N-CH 65V 9-Pin NI-780-4S4 T/R

RfMW:
RF Power Transistor,2496 to 2690 MHz, 42 W, Typ Gain in dB is 14.2 @ 2690 MHz, 28 V, LDMOS, SOT1809

Win Source:
FET RF 2CH 65V 2.69GHZ NI780-4

AFT26HW050GSR3数据文档