Trans MOSFET N-CH 55V 53A 3Pin3+Tab TO-262 Tube
Description
Advanced HEXFET® Power MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Surface Mount IRFZ46NS
Low-profile through-hole IRFZ46NL
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
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