128Mb DDR SDRAM
Key Features
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobeDQS
• Four banks operation
• Differential clock inputsCK and CK
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 clock
-. Burst length 2, 4, 8
-. Burst type sequential & interleave
• All inputs except data & DM are sampled at the positive going edge of the system clockCK
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval4K/64ms refresh
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
型号 | 品牌 | 下载 |
---|---|---|
K4H560838D-TCA0 | Samsung 三星 | 下载 |
K4H511638G-LCCC | Samsung 三星 | 下载 |
K4H561638F-TCB0 | Samsung 三星 | 下载 |
K4H561638F-UCB3 | Samsung 三星 | 下载 |
K4H510838C-ZCB3 | Samsung 三星 | 下载 |
K4H561638F-UCCC | Samsung 三星 | 下载 |
K4H561638H-UCCC | Samsung 三星 | 下载 |
K4H561638H-UCB3 | Samsung 三星 | 下载 |
K4H511638D-UCB3 | Samsung 三星 | 下载 |
K4H510838D-UCCC | Samsung 三星 | 下载 |
K4H510838C-UCCC | Samsung 三星 | 下载 |