IPD25N06S4L30ATMA1

IPD25N06S4L30ATMA1概述

DPAK N-CH 60V 25A

N-Channel 60V 25A Tc 29W Tc Surface Mount PG-TO252-3-11


得捷:
MOSFET N-CH 60V 25A TO252-31


贸泽:
MOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2


艾睿:
Increase the current or voltage in your circuit with this IPD25N06S4L30ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 29000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.


Verical:
Trans MOSFET N-CH 60V 25A Automotive 3-Pin2+Tab DPAK T/R


IPD25N06S4L30ATMA1数据文档
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