IRL640SPBF

N 通道 MOSFET，200V 至 250V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is surface-mount and capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. This package is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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Logic-level gate drive

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RDS ON Specified at VGS = 4 and 5V

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Surface-mount

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Halogen-free