A2V07H400-04NR3

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 595-851 MHz, 107 W Avg., 48 V

Overview

The A2V07H400-04N 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz.

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## Features

* Advanced high performance in-package Doherty

* Greater negative gate-source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.3 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

595 MHz| 19.4| 58.4| 6.8| –29.8

623 MHz| 19.9| 59.4| 7.1| –30.1

652 MHz| 19.8| 57.2| 7.1| –32.2