P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
P 沟道 STripFET™ 功率 MOSFET，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
得捷:
MOSFET P-CH 60V SOT223
欧时:
### P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
立创商城:
P沟道 60V 3A
贸泽:
MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI
e络盟:
功率场效应管, MOSFET, P沟道, 60 V, 3 A, 0.13 ohm, SOT-223, 表面安装
艾睿:
Compared to traditional transistors, STN3P6F6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet technology.
安富利:
Trans MOSFET P-CH 60V 3A 4-Pin3+Tab SOT-223 T/R
富昌:
STN3P6F6 系列 P 沟道 60 V 160 mΩ 6.4 nC STripFET™ VI Mosfet - SOT-223
Chip1Stop:
Trans MOSFET P-CH 60V 3A 4-Pin3+Tab SOT-223 T/R
TME:
Transistor: P-MOSFET; unipolar; -60V; -2A; 2.6W; SOT223
Verical:
Trans MOSFET P-CH 60V 3A 4-Pin3+Tab SOT-223 T/R
Newark:
# STMICROELECTRONICS STN3P6F6 MOSFET, P-CH, -60V, -3A, SOT-223-4 New
儒卓力:
**P-CHANNEL-MOS-FET 3A 60V SOT223 **
力源芯城:
-60V,0.13Ohm,-3A,P沟道功率MOSFET
DeviceMart:
MOSF P CH 60V 3A SOT-223
Win Source:
MOSFET P-CH 60V SOT-223