SPP80N03S2L04AKSA1

SPP80N03S2L04AKSA1概述

TO-220AB N-CH 30V 80A

N-Channel 30V 80A Tc 188W Tc Through Hole PG-TO220-3-1


得捷:
MOSFET N-CH 30V 80A TO220-3


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPP80N03S2L04AKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 188000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.


富昌:
SPP80N03S2L 系列 30 V 3.9 mOhm N沟道 OptiMOS® 功率-晶体管 - P- TO-220 -3


Verical:
Trans MOSFET N-CH 30V 80A 3-Pin3+Tab TO-220AB Tube


Win Source:
MOSFET N-CH 30V 80A TO220-3 / N-Channel 30 V 80A Tc 188W Tc Through Hole PG-TO220-3-1


SPP80N03S2L04AKSA1数据文档
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SPP80N03S2L04AKSA1

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SPP80N06S2-05

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