单晶体管, IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263, 3 引脚
Summary of Features:
-
.
-
Very low V CEsat 1.5V typ.
-
.
-
Maximum junction temperature 175°C
-
.
-
Short circuit withstand time 5µs
-
.
-
Positive temperature coefficient in V CEsat
-
.
-
Low EMI
-
.
-
Low gate charge
-
.
-
Green package
-
.
-
Very soft, fast recovery anti-parallel Emitter Controlled HE diode