Trans IGBT Chip N-CH 600V 86A 284000mW 4Pin SOT-227
This IGBT transistor from is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 284000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual emitter configuration.
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