BUL705

高压快速开关NPN功率晶体管 High voltage fast-switching NPN Power Transistor

Bipolar BJT Transistor NPN 400V 5A 80W Through Hole TO-220AB

得捷:
TRANS NPN 400V 5A TO220

贸泽:
Bipolar Transistors - BJT Hi Vltg FAST SWITCH PNP Pwr TRANSISTOR

艾睿:
The NPN BUL705 general purpose bipolar junction transistor, developed by STMicroelectronics, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 10 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT NPN 400V 5A 3-Pin3+Tab TO-220 Tube