FQD7N20L

LOGIC 200V N沟道MOSFET 200V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Features

• 5.5A, 200V, RDSon = 0.75Ω @VGS = 10 V

• Low gate charge typical 6.8 nC

• Low Crss typical 8.5 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct operation from logic drivers

• RoHS Compliant