IPB50R140CPATMA1

INFINEON  IPB50R140CPATMA1  晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V

CoolMOS™CP 功率 MOSFET

得捷:
MOSFET N-CH 550V 23A TO263-3

立创商城:
N沟道 550V 23A

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPB50R140CPATMA1, 23 A, Vds=550 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP

e络盟:
功率场效应管, MOSFET, N沟道, 550 V, 23 A, 0.13 ohm, TO-263 D2PAK, 表面安装

艾睿:
Make an effective common gate amplifier using this IPB50R140CPATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 192000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology.

TME:
Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3

Verical:
Trans MOSFET N-CH 550V 23A 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB50R140CPATMA1  MOSFET Transistor, N Channel, 23 A, 550 V, 0.13 ohm, 10 V, 3 V