超线性驱动放大器1800至2000年兆赫 Ultra Linear Driver Amplifier 1800 to 2000 MHz
Description
The is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability.
This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with low noise figure. The model is particularly suited for power driver applications used in the base station & repeater infrastructure, and for commercial & military radios.
Features
• LOW NOISE FIGURE: 2.7 dB TYP.
• GAIN: 21 dB TYP.
• HIGH P1dB: +32.5 dBm TYP.
• HIGH IP3: +46 dBm TYP.
• BROADBAND RESPONSE: 1.5 GHz TO 2.2 GHz TYP.
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