沟槽场截止 259W 1.25kV 40A
You can use this IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 1250 V. Its maximum power dissipation is 259000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGW20IH125DF | ST Microelectronics 意法半导体 | 下载 |
| STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |