SIE800DF-T1-E3数据手册PDF_SIE800DF-T1-E3中文资料-锐单商城

SIE800DF-T1-E3概述

N沟道30 V （D -S ）的MOSFET N-Channel 30 V D-S MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Extremely Low Qgd for Low Switching Losses

• TrenchFET®Power MOSFET

• Ultra Low Thermal Resistance Using Top Exposed PolarPAK® Package for Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

\- Die Not Exposed

\- Same Layout Regardless of Die Size

• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through

• 100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•VRM

• DC/DC Conversion: High-Side

• Synchronous Rectification

SIE800DF-T1-E3数据文档