“ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Description
The VNN3NV04, , VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Features
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET analog driving
■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
| 型号 | 品牌 | 下载 |
|---|---|---|
| VNS3NV04 | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04D-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04DP-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV0413TR | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04P-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04PTR-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04DPTR-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04D13TR | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04DTR-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04-E | ST Microelectronics 意法半导体 | 下载 |
| VNS3NV04TR-E | ST Microelectronics 意法半导体 | 下载 |