IRFB4227PBF

200V,65A,24mΩ,N沟道功率MOSFET

"This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications."

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*Features:**

* Advanced Process Technology

* Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications

* Low E pulse rating to reduce power dissipation in PDP applications

* Low Qg for fast Response

* High Repetitive Peak current capability for reliable operation

* Short fall & rise times for fast switching

* 175 degC operating junction temperature for improved ruggedness

* Repetitive Avalanche capability for robustness and reliability"