VISHAY VSMY1850X01 红外发射器, 高速, 120 °, 0805, 100 mA, 10 ns, 10 ns
The is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, moulded in clear. It is suitable for high pulse current operation and floor life of 168h, MSL 3, according to J-STD-020.
| 型号 | 品牌 | 下载 |
|---|---|---|
| VSMY1850X01 | Vishay Semiconductor 威世 | 下载 |
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