Trans GP BJT NPN 60V 10A 3Pin2+Tab TO-3
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
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