IPB180N04S4H0ATMA1

晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V

表面贴装型 N 通道 180A（Tc） 250W（Tc） PG-TO263-7-3

欧时:
Infineon MOSFET IPB180N04S4H0ATMA1

得捷:
MOSFET N-CH 40V 180A TO263-7-3

e络盟:
晶体管, MOSFET, N沟道, 180 A, 40 V, 900 µohm, 10 V, 3 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB180N04S4H0ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W

Verical:
Trans MOSFET N-CH 40V 180A Automotive 7-Pin6+Tab D2PAK T/R