RN1110MFV

RN1110MFV 带阻NPN三极管 50V 100mA/0.1A 4.7k 增益120 SOT-723/VESM marking/标记 XK 开关 逆变电路 接口电路和驱动器电路应用

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA/0.1A 基极输入电阻R1 Input ResistanceR1| 4.7KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 电阻比R1/R2 Resistance Ratio| 直流电流增益hFE DC Current GainhFE| 120 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| SwitchingInverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2110MFV to RN2111MFV 描述与应用| 开关，逆变电路，接口电路， 驱动器电路应用 适合非常高密度安装的超小型封装， 结合到该晶体管的偏置电阻器的数量减少 部件，所以使制造的更加紧凑的设备和 降低了组装成本。 宽范围的电阻值是可用于在各种电路。 互补的RN2110MFV RN2111MFV的