IPD12CN10NGBUMA1

IPD12CN10NGBUMA1概述

DPAK N-CH 100V 67A

Make an effective common gate amplifier using this power MOSFET from Technologies. Its maximum power dissipation is 125000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 2 technology.

IPD12CN10NGBUMA1数据文档
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