IPB017N10N5LFATMA1

晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0015 ohm, 10 V, 3.3 V

Description:

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance R DSon and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DSon of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�

Summary of Features:

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Combination of low R DSon and wide safe operating area SOA

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High max. pulse current

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High continuous pulse current�

Benefits:

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Rugged linear mode operation

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Low conduction losses�

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Higher in-rush current enabled for faster start-up and shorter down time