ON SEMICONDUCTOR MPSW01G 功率晶体管, NPN
If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MPSW01G | ON Semiconductor 安森美 | 下载 |
| MPSW06RLRA | ON Semiconductor 安森美 | 下载 |
| MPSW01AG | ON Semiconductor 安森美 | 下载 |
| MPSW06RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSW42RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSW42G | ON Semiconductor 安森美 | 下载 |
| MPSW45ARLRAG | ON Semiconductor 安森美 | 下载 |
| MPSW45AG | ON Semiconductor 安森美 | 下载 |
| MPSW56RLRAG | ON Semiconductor 安森美 | 下载 |
| MPSW51AG | ON Semiconductor 安森美 | 下载 |
| MPSW92RLRAG | ON Semiconductor 安森美 | 下载 |