SIHD7N60E-GE3数据手册PDF_SIHD7N60E-GE3中文资料-锐单商城

SIHD7N60E-GE3概述

VISHAY SIHD7N60E-GE3 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V

The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

.: Low figure-of-meritFOM RON x Qg

.: Low input capacitance CISS

.: Reduced switching and conduction losses

.: Ultra low gate charge

.: Avalanche energy rated

.: Halogen-free

SIHD7N60E-GE3详细参数

SIHD7N60E-GE3数据文档

型号	品牌	下载
SIHD7N60E-GE3	Vishay Semiconductor 威世	下载
SIHD3N50D-GE3	Vishay Semiconductor 威世	下载
SIHD5N50D-GE3	Vishay Semiconductor 威世	下载
SIHD6N65E-GE3	Vishay Semiconductor 威世	下载
SIHD3N50D-E3	Vishay Semiconductor 威世	下载
SIHD5N50D-E3	Vishay Semiconductor 威世	下载
SIHD6N62E-GE3	Vishay Semiconductor 威世	下载
SIHD7N60E-E3	Vishay Semiconductor 威世	下载
SIHD12N50E-GE3	Vishay Semiconductor 威世	下载