ECH8501-TL-H

双极晶体管（ ????） 30V ， （A ????） 30A ，低VCE （ sat）的互补双ECH8 Bipolar Transistor –30V, –30A, Low VCEsat Complementary Dual ECH8

- 双极 BJT - 阵列 NPN，PNP 30V 5A 280MHz 1.6W 表面贴装型 8-ECH

得捷:
TRANS NPN/PNP 30V 5A 8ECH

立创商城:
1个NPN,1个PNP 30V 5A

贸泽:
双极晶体管 - 双极结型晶体管BJT BIP PNP+NPN 5A 30V

艾睿:
The versatility of this npn and PNP ECH8501-TL-H GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1600 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN/PNP 30V 5A 8-Pin ECH T/R

Verical:
Trans GP BJT NPN/PNP 30V 5A 1600mW 8-Pin ECH T/R